News Article
Whats the use of advanced thermally augmented SPICE models ?
GaN Systems Inc, a prominent developer of gallium nitride (GaN) power switching semiconductors, is presenting a technical paper at APEC* describing the application of SPICE models developed for very high power GaN devices and integrated GaN drive circuits in automotive applications.
At present, drive train power requirements of most hybrid vehicles (HVs) and electric vehicles (EVs) are met by using silicon IGBT devices, but it is expected that GaN will take over as the technology of choice for this market in the near future, as GaN power transistors provide greatly enhanced performance in these applications, thanks to lower on-resistance and minimal switching losses compared to silicon-based semiconductors.
GaN Systems' presentation describes the use of advanced thermally augmented SPICE models which were developed to enable large area GaN devices to be simulated in conjunction with an integrated GaN driver, demonstrating how gallium nitride devices can be used in the very wide temperature ranges and high electrical noise environments found in automotive applications. The presentation will be given by John Roberts, Chief Technical Officer, who co-authored the paper with colleague Hughes Lafontaine.
*APEC 2014, Fort Worth, Texas, March 16 - 20
