News Article
Cree releases new GaN HEMTs for L-Band radar systems
Cree has released two new gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in 1.2 to 1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500. Featuring the highest known L-Band efficiency performance at 85°C, high power gain performance, and wide bandwidth capabilities, the new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800 MHz, including: tactical air navigation systems (TACAN), identification: friend or foe (IFF) systems, and other military telemetry systems.
Based on Cree's 50 V 0.4µ GaN on SiC foundry process, Cree's new GaN HEMTs for L-Band radar systems provide engineers with excellent power and small signal performance, are internally pre-matched on the input, and are available in ceramic/metal flange and pill packages that are much smaller than competing gallium arsenide (GaA) or silicon (Si) RF technology, enabling enhanced design flexibility.
The 250 W CGHV14250 features 330W typical output power, 18 dB power gain, and 77% typical drain efficiency. The 500W CGHV14500 features 500 W typical output power, 17 dB power gain, and 70% typical drain efficiency. Both the 250 W and 500 W GaN HEMTs feature 0.3 dB pulsed amplitude droop.
