News Article
EPC Blurs The Line Between Power And RF Transistors With Gallium Nitride Transistor
Efficient Power Conversion Corporation has extended its family of high-speed, high performance transistors with the EPC8000 family of products.
Cutting new ground for power transistors, these third generation devices have switching transition speeds in the sub nano-second range, making them capable of hard switching applications above 10 MHz. Even beyond the 10MHz for which they were designed, these products exhibit very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications.
"We are very excited about how our innovative new family of eGaN FETs will change the industry.These products take EPC and gallium nitride transistor technology to a level of performance that enables applications that were previously beyond the capability of MOSFETs. We now have eGaN FETs that can be used in both power semiconductor and RF applications," said Alex Lidow, EPC's co-founder and CEO.
Products in the family are available with on-resistance values from 125 mΩ through 530 mΩ, and three blocking voltage capabilities, 40 V, 65 V and 100 V. These new transistors have several new features that further enable designers to take full advantage of the high performance gallium nitride FETs have to offer. These features include reduction in QGD thereby reducing voltage transient switching losses, improved Miller ratio providing high dv/dt immunity, low inductance pads for improved connection to both gate and drain circuits, orthogonal current flow between the gate and drain circuits for enhanced CSI reduction, and a separate gate return connection also for enhanced CSI reduction.
Examples of applications benefiting from the low power, compact, high frequency EPC8000 family of devices include hard-switching power converters operating in the multi-megahertz range, envelope tracking in RF power amplifiers, highly resonant wireless power transfer systems for wireless charging of mobile devices.
The EPC9027 development board, featuring the EPC8007 devices and the LM5113 gate driver IC in a half bridge configuration, is available now. Additional development boards will be available to support designers in evaluating and incorporating other EPC8000 family products into their power conversion systems.
