Vishay Shrinks Its 100 V N-Channel Power MOSFETs
Vishay Intertechnology has released two new 100 V n-channel TrenchFET power MOSFETs that extend Vishay's ThunderFET technology to smaller package sizes.
The thermally enhanced SiB456DK and SiA416DJ are claimed to be the industry's first 100 V n-channel devices in the compact PowerPAK SC-75 and PowerPAK SC-70. The devices offer on-resistances of less than 200 milliohms (mΩ) and 100 mΩ, respectively.
These MOSFETs are optimised for boost converters, low-power DC/AC inverters, and primary side switching in miniature DC/DC converters for telecom bricks, point-of-load applications, and LED lighting in portable equipment.
For designers, the devices' ultra-compact 1.6mm x 1.6mm PowerPAK SC-75 and 2mm by 2mm PowerPAK SC-70 packages save PCB space in these applications. At the same time, their low on-resistance translates into lower conduction losses for reduced power consumption and higher efficiency. What's more, the MOSFETs' on-resistance rating down to 4.5 V simplifies gate drives.
In applications where on-resistance is more critical than size, the 2 mm by 2 mm SiA416DJ offers a maximum on-resistance of 83 mΩ at 10 V and 130 mΩ at 4.5 V, and a low on-resistance times gate charge - a key figure of merit (FOM) for MOSFETs in DC/DC converter applications - of 540 mΩ -nC at 10 V and 455 mΩ -nC at 4.5 V.
For applications where size is more critical, the 1.6 mm by 1.6 mm SiB456DK features maximum on-resistance of 185 mΩ at 10 V and 310 mΩ at 4.5 V, and an FOM of 611 mΩ -nC at 10 V and 558 milliohms-nC at 4.5 V.
The SiB456DK and SiA416DJ are fully Rg and UIS tested. The MOSFETs are halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU.
Samples and production quantities of the new MOSFETs are available now, with lead times of 12 to 14 weeks for large orders.
