Infineon launches new generation of GaN discretes
Infineon has launched a new family of high-voltage discretes, the CoolGaN transistors 650 V G5. Target applications range from consumer and industrial switched-mode power supply (SMPS) such as USB-C adapters and chargers, lighting, TV, data centre and telecom rectifiers to renewable energy and motor drives in home appliances.
The latest CoolGaN generation is designed as a drop-in replacement for the CoolGaN Transistors 600 V G1, enabling rapid redesign of existing platforms. The new devices provide improved figures of merit to ensure competitive switching performance in focus applications.
Compared to key competitors and previous product families from Infineon, the CoolGaN transistors 650 V G5 are said to offer up to 50 percent lower energy stored in the output capacitance (E oss), up to 60 percent improved drain-source charge (Q oss) and up to 60 percent lower gate charge (Q g).
Combined, these features result in excellent efficiencies in both hard- and soft-switching applications. This leads to a significant reduction in power loss compared to traditional silicon technology, ranging from 20 to 60 percent depending on the specific use case, according to Infineon.
The new product family offers a wide range of R DS(on) package combinations. Ten R DS(on) classes are available in various SMD packages, such as ThinPAK 5x6, DFN 8x8 , TOLL and TOLT. All products are manufactured on high-performance 8-inch production lines in Villach (Austria) and Kulim (Malaysia). In the future, CoolGaN will transition to 12-inch production.
A demo featuring the CoolGaN Transistors 650 V G5 will be showcased at electronica 2024 in Munich from November 12 to 15.
