Sanan expands high-voltage SiC portfolio
Sanan Semiconductor is expanding its SiC power product portfolio with the introduction of 1700V and 2000V devices for applications ranging from renewable energy to electric vehicle charging infrastructure.
"Our new high-voltage SiC devices represent a significant leap forward in power electronics," said Leo Liao, project manager. "By enabling higher DC voltages, these components allow for increased power output at the same current levels, or maintaining system power ratings while reducing current and energy losses dramatically."
The 1700V SiC MOSFETs and diodes are said to be particularly well-suited for applications requiring extra voltage margins beyond traditional 1200V devices. Meanwhile, the 2000V SiC diodes can be used in high DC link voltage systems up to 1500V DC, addressing the needs of industrial and power transmission applications.
The 1700V SiC diodes are available in 25A and 50A variant. 2000V 40A SiC diodes, with a 20A version planned for release by the end of 2024. The 1700V SiC MOSFETs have 1000mΩ on-resistance. A 2000V 35mΩ SiC MOSFET is due for release in 2025
