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Tuesday 15th December 2015
Ampleon broaden portfolio with heavy GaN investment
Tuesday 15th December 2015
$3.4 million contract, 18-month development program that will demonstrate the benefits of GE’s SiC MOSFET technology in two critical systems
Monday 14th December 2015
Achievements in Low Dispersion Buffers and High Current High-Threshold Voltage p-GaN Devices Presented at IEDM 2015
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Friday 11th December 2015
A new atomically-flat transistor developed by UC Santa Barbara engineers overcomes one of the fundamental conventional transistors and reduces power dissipation by over 90 percent Professor Kaustav Banerjee (right) with researchers in his Nanoelectronics Research Lab at UC Santa Barbara.Credit: UCSB
Tuesday 8th December 2015
New company will exploit potential of RF data and energy transfer
Tuesday 8th December 2015
Market responding 'faster than planned' 
Saturday 5th December 2015
Company to show RF devices for L-, S-, C-, and X-Band at IRSI 2015
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Thursday 3rd December 2015
The battery is the heart of the electric car. Fraunhofer researchers have developed an energy storage device which is significantly more cost-effective over the entire life cycle in comparison with previous models. If one of the more than one hundred battery cells is defective, it can be replaced easily. Until now, the entire battery had to be replaced.
Thursday 3rd December 2015
Agreement covers Japan, Taiwan, Singapore, Malaysia and the Philippines
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Wednesday 2nd December 2015
Tuesday 1st December 2015
New 1200V/300A model suitable for solar power conditioners and industrial equipment
Tuesday 1st December 2015
Canadian company positions itself to meet high volume demand for GaN power transistors
Tuesday 1st December 2015
Power semiconductor veteran brings 35 years of experience to sales and marketing role

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