Infineon adds 160V MOTIX 3-phase gate driver IC
Integrates power management unit, current sense amplifier, and overcurrent protection
To further expand its offering for automotive and industrial motor control applications, Infineon has introduced the MOTIX 3-phase gate driver IC 6ED2742S01Q. The 160V silicon-on-insulator (SOI) gate driver features an integrated power management unit (PMU) and is available in a QFN-32 package with a thermally efficient exposed power pad. This makes the easy-to-integrate device suitable for battery-powered industrial BLDC motor control drives including cordless power tools, robotics, drones, and light electric vehicles (LEVs).
The 6ED2742S01Q has integrated bootstrap diodes that power three external high-side bootstrap capacitors. Through a trickle charge pump, they support 100 percent duty cycle operation. Protection features include under-voltage lock-out, overcurrent protection with configurable threshold, fault communication, and automatic fault recovery. The output drivers integrate a high-pulse current buffer stage designed for minimal driver cross-conduction. In addition, a current sense amplifier (CSA) with selectable gain between the low-side supply voltage (V SS) and the low-side power ground return (COM) is integrated.
The MOTIX gate driver provides a 1 A source and 2 A sink current with independent under-voltage lock-out (UVLO) for both high-side and low-side gate drives. The device offers a propagation delay of 100 ns and a minimum dead time of 100 ns with built-in delay matching. As a result, the driver enables high switching frequencies with reduced level shift losses. The exposed pad of the QFN-32 provides very low thermal resistance, enabling reliable operation.
The MOTIX 6ED2742S01Q is rated for industrial temperature operation ranging from -40°C to 125°C and can easily drive OptiMOS and StrongIRFET MOSFETs in single or parallel combinations. It supports battery voltages from 10.8 V to 120 V.
The MOTIX 6ED2742S01Q can be ordered now in an industry-standard 5 x 5 mm² QFN-32 package with an exposed pad and a 2 kV HBM ESD rating.