TI cuts 60 V MOSFET size
Texas Instruments (TI) has introduced a new 60 V N-channel FemtoFET power transistor which the company says will provide the industry's lowest resistance that is 90 percent below traditional 60 V load switches, reducing power loss in end-systems.
The CSD18541F5 is offered in a tiny 1.53 mm by 0.77 mm silicon-based package that has an 80 percent smaller footprint than load switches in SOT-23 packages.
The company claims the 60 V N-channel FemtoFET power transistor from Texas Instruments provides the industry's lowest resistance that is 90 percent below traditional 60V load switches, reducing power loss in end-systems. The CSD18541F5 is offered in a tiny 1.53 mm by 0.77 mm silicon-based package that has an 80 percent smaller footprint than load switches in SOT-23 packages.
The CSD18541F5 metal-oxide semiconductor field-effect transistor (MOSFET) maintains a typical on-resistance (Rdson) of 54 mΩ and is designed and optimized to replace standard small-signal MOSFETs in space-constrained industrial load-switch applications. The tiny land grid array (LGA) package features a 0.5 mm pitch between pads for easy mounting. Read the blog post, "Shrink your industrial footprint with new 60V FemtoFET MOSFETs."
The CSD18541F5 expands TI's NexFET technology portfolio of FemtoFET MOSFETs to include higher voltages and manufacturing-friendly footprints.
