Qorvo GaN 50 volt transistors pump up performance
Qorvo, a provider of core technologies and RF solutions for mobile, infrastructure and defence applications, has introduced six new 50 Volt gallium nitride (GaN) transistors designed to optimise power performance for commercial and defence radar, communications systems and avionics.
Roger Hall, Qorvo's general manager of Defence & Aerospace Products said, "This new family of 50V GaN transistors improves system performance by offering more power gain and power-added efficiency. Qorvo can better enable defence equipment such as phased array radars, to deliver higher performance while managing size, cost and power."
Qorvo claim their new family of 50V GaN transistors offers significant operational and system cost savings from greater system-level efficiency. The small device size and higher impedance input/output leads help optimize board designs for radar, communications, avionics, wideband amplifiers and test instrumentation.
The QPD1009 and QPD1010 are now available in 3x3 mm plastic QFN packages, while the QPD1008(L) and QPD1015(L) are now available in industry standard, thermally enhanced NI-360 air cavity ceramic packages, in eared and earless versions. This family of GaN transistors operates from 10W up to 125W power levels.
