+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
*/
News Article

$13.5M for US DoD SiC development

US Air Force Research Laboratory to fund cooperative agreement to develop large SiC substrates

The US Department of Defense's Air Force Research Laboratory is looking to award a cooperative agreement for the development of large SiC substrate and epitaxial processes to advance current technology in terms of affordability and quality.

The estimated total program funding available is $13.5 million.

RF GaN devices are rapidly becoming the technology of choice for high power RF applications. But they depend upon the use of high quality, semi-insulating SiC substrates. The combination of high voltage and current handling as well as switching frequency capabilities make SiC based power devices a viable alternative to silicon technology. 

The funding opportunity number is RFI-AFRL-RQKS-2016-0002 (CFDA 12.800). It was posted on March 18 with an application closing date of April 18.


×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: