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Monolith Semiconductor to Demo SiC MOSFETs at APEC 2016

200kHz switching frequency and over 98 percent efficiency

Monolith Semiconductor, a Texas-based SiC start-up, will be demonstrating its fast-switching SiC MOSFETs in this year's Applied Power Electronics Conference (APEC). The conference will run from March 20-24 in Long Beach, California.

Demonstrations will be offered illustrating the capabilities of Monolith's SiC technology by operating a 5kW buck converter with 675V nominal input and 350V nominal output at high frequencies (~200 kHz) and high efficiency (>98 percent) converter performance that can't be achieved with silicon IGBTs.

According to the company, its SiC technology allows for large reductions in device size and weight (as a result of the higher frequency capabilities) and power consumption (due to reduced power losses) in applications like datacentre Uninterruptible Power Systems (UPS).

Representatives from Monolith Semiconductor and the designer of the power converter will be on hand to share additional information on the advantages of Monolith's SiC technology and how it can enable higher frequency and higher efficiency power converter applications.

In 2015, Monolith formed a strategic partnership with Littelfuse to develop power semiconductors for industrial and automotive markets.

 "Littelfuse is an ideal partner for us," said Sujit Banerjee, CEO of Monolith Semiconductor. "We are excited for the opportunity this offers to increase our customer reach dramatically, gain access to global channels, and benefit from their sales and marketing depth and expertise." 

Littelfuse has committed to add to its investment as Monolith achieves specific technological milestones.

Monolith Semiconductor also has a strategic manufacturing partnership with a major CMOS fabrication facility in Texas to produce Monolith's 150mm SiC wafers in high volumes. By producing SiC power diodes and MOSFETs in a facility typically used for silicon, Monolith Semiconductor says it intends to lower the cost, improve the reliability, and expand the availability of SiC devices.  


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