+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
*/
News Article

Aixtron and Exagan move GaN-on-Si to 200mm substrates

Exagan selects AIX G5+ C for power-switching devices

Aixtron, a provider of deposition equipment, has shipped an AIX G5+ C system to French power GaN start-up Exagan, a spin-off from semiconductor materials firm Soitec and European research centre CEA-Leti.  

Exagan will use Aixtron's deposition tool to start volume production of GaN-on-Si materials for power-switching devices.

Fabrice Letertre, COO and co-founder of Exagan, comments: "Aixtron and our parent company CEA-Leti have enjoyed a long and successful R&D relationship developing GaN-on-Si technology. Now Exagan is partnering with Aixtron to deliver on our industrial roadmap by using epi to reach our cost milestones. 

"By implementing an efficient GaN-on-Si manufacturing process on 200 mm silicon substrates, we are aligning GaN technology with silicon manufacturing standards. This makes our G-FET products the most cost-efficient wide-bandgap solution for the solar, IT electronics, connectivity and automotive markets."

The AIX G5+ C Planetary Reactor system is an advanced epitaxy production platform. It comes in a 5x200 mm configuration with single-wafer rotation and is equipped with full cassette-to-cassette wafer loading as well as Aixtron´s in-situ reactor cleaning feature for high-volume manufacturing.

Exagan, in collaboration with its R&D partner CEA-Leti, selected the AIX G5+ C epitaxial deposition tool after evaluating its effectiveness in achieving tight uniformity control and high throughput using Exagan's proprietary G-Stack(tm) process technology. 

This technology is used in creating a unique stack of GaN-based materials that enables the fabrication of Exagan's  G-FET high-power, very-high-efficiency transistors. Along with Soitec's industrial facility and expertise and CEA-Leti's 200 mm equipment and characterisation tools, Aixtron's equipment adds to Exagan's supply chain as it ramps up its material production facility in Grenoble.

This equipment installation is a major step in Exagan's and CEA-Leti's strategic partnership to accelerate Exagan's GaN-on-Si integration roadmap. The partnership is supported by the 'G-drive+' R&D project, funded by Bpifrance through the Investissements d'Avenir.

"Our AIX G5+ C is the only system to date offering full automation of GaN-on-Si MOCVD processes as commonly encountered in the silicon industry. The system achieves the highest on-wafer layer uniformity in a batch multi-wafer configuration for maximum throughput and yield. We are pleased to work with the Exagan team on volume production of 200 mm GaN-on-Si materials for efficient power electronics applications," says  Frank Wischmeyer, VP power electronics at Aixtron. 


×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: