News Article
EPC announces miniature eGaN FET
120V, 20A device comes in 1.35 mm2 package.
EPC has announced the EPC2110, a dual (common-source) eGaN FET configuration in a small 1.35 mm2 package.
This product is a 120VDS, 20A device with a maximum RDS(on) of 60mΩ with 5V applied to the gate.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2110 is much smaller and has many times superior switching performance, according to EPC.
Circuit applications that benefit from this eGaN IC's performance include ultra high frequency DC-DC conversion, synchronous rectification, class-D audio amplifiers, and most notably, wireless power transfer.
