Cree to present on SiC at ECCE in Montreal
Cree has announced that it will be delivering five technical presentations about its SiC based power technology at the seventh annual IEEE Energy Conversion Congress and Expo (ECCE 2015), which will take place September 20- 24, 2015 at the Palais des Congrès in Montreal.
On Monday, September 21, 2015, Cree co-founder and chief technology officer of the Power and RF business unit, John Palmour, will present "˜SiC Power Devices: Changing the Dynamics of Power Circuits from 1 to 30kV' during the plenary session.
In this talk, Palmour will provide attendees with an overview of SiC semiconductors across a wide voltage range, discuss the advantages they provide over silicon technologies, and talk about price vs. performance data for SiC and silicon in a system-to-system rather than a component-to-component comparison. Palmour will also briefly discuss a few of the high voltage devices (up to 27kV) that Cree is currently developing.
"The most common knock against SiC is that it's more expensive than silicon, which it is," said Palmour. "However, a component-to-component comparison will never be wholly accurate because SiC is vastly superior to silicon with regard to performance. SiC devices make systems less expensive through their ability to operate at much higher frequencies, shrink magnetics, and simplify designs."
He added: "They can also dramatically cut conduction and thermal management costs in lower frequency applications. Further, SiC devices can even allow designers to switch from multi-level topologies down to less complex two-level designs. So, as an industry, we've got to switch the focus of this conversation from the cost of the devices to the cost vs. performance metrics of the entire system."
The following Cree presentations will also be delivered at ECCE 2015.
'900V Silicon Carbide MOSFETs for Breakthrough Power Supply Design', Adam Barkley, SiC power device application engineer, Cree.
'Advances in SiC and GaN Based Devices, Packaging, and Systems', John Palmour and Ty McNutt, director of business development, Cree.
'3.3kV SiC MOSFET Update for Medium Voltage Applications', Jeffrey Casady, power business development and program manager, Cree.
'10-25kV Silicon Carbide Power Modules for Medium Voltage Applications', Brandon Passmore, development electronics packaging engineering manager, Cree.
