Rohm announces First Trench-Type SiC MOSFET
Rohm has recently announced the development and mass production of an SiC MOSFET that adopts the world's first trench structure. Compared to existing planar-type SiC MOSFETs, ON resistance is reduced by 50 percent in the same chip size, making it possible to decrease power loss in a variety of equipment, from industrial inverters and power supplies to power conditioners for solar power systems.
In recent years the demand for measures against power supply issues on a global scale has brought increased attention to power supply conversion and the efficient delivery of generated power. SiC power devices are expected to play a major role as key solutions that dramatically reduce loss during power conversion.
Rohm's latest offering, a SiC MOSFET featuring a trench structure that maximises SiC characteristics, represents a milestone with significant implications worldwide, according to the company.
Optimum performance is achieved by combining exceedingly low loss with high-speed switching performance. As a result, efficiency during power conversion is improved and waste eliminated during production, contributing to increased miniaturisation, lighter weight, and greater energy savings in a variety of equipment. And going forward Rohm is developing full SiC modules that integrate both SiC MOSFETs and SBDs.
Although adopting a trench construction in SiC MOSFETs has been attracting increased attention due to its effectiveness in reducing ON resistance, there is a need to establish a structure for mitigating the electric field generated in the trench gate portion in order to guarantee long-term reliability.
Rohm says it was able to meet this need and successfully mass-produce the industry's first trench-type SiC MOSFETs by using a proprietary structure. As a result, switching performance is improved (around 35 percent lower input capacitance) and ON resistance reduced by 50 percent over planar-type SiC MOSFETs.
Rohm has also developed a full SiC power module that incorporates these latest trench-type SiC MOSFETs in a 2-in-1 circuit with integrated SiC SBDs.
In addition, the 1200V/180A module features the same rated current as Si IGBT modules while reducing switching loss by approximately 42 percent versus planar-type SiC MOSFETs.