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Rohm announces First Trench-Type SiC MOSFET

ON resistance 50 percent less compared to planar technology

Rohm has recently announced the development and mass production of an SiC MOSFET that adopts the world's first trench structure. Compared to existing planar-type SiC MOSFETs, ON resistance is reduced by 50 percent in the same chip size, making it possible to decrease power loss in a variety of equipment, from industrial inverters and power supplies to power conditioners for solar power systems.

In recent years the demand for measures against power supply issues on a global scale has brought increased attention to power supply conversion and the efficient delivery of generated power. SiC power devices are expected to play a major role as key solutions that dramatically reduce loss during power conversion. 

Rohm's latest offering, a SiC MOSFET featuring a trench structure that maximises SiC characteristics, represents a milestone with significant implications worldwide, according to the company. 

Optimum performance is achieved by combining exceedingly low loss with high-speed switching performance. As a result, efficiency during power conversion is improved and waste eliminated during production, contributing to increased miniaturisation, lighter weight, and greater energy savings in a variety of equipment. And going forward Rohm is developing full SiC modules that integrate both SiC MOSFETs and SBDs.

Although adopting a trench construction in SiC MOSFETs has been attracting increased attention due to its effectiveness in reducing ON resistance, there is a need to establish a structure for mitigating the electric field generated in the trench gate portion in order to guarantee long-term reliability.

Rohm says it was able to meet this need and successfully mass-produce the industry's first trench-type SiC MOSFETs by using a proprietary structure. As a result, switching performance is improved (around 35 percent lower input capacitance) and ON resistance reduced by 50 percent over planar-type SiC MOSFETs.

Rohm has also developed a full SiC power module that incorporates these latest trench-type SiC MOSFETs in a 2-in-1 circuit with integrated SiC SBDs.

In addition, the 1200V/180A module features the same rated current as Si IGBT modules while reducing switching loss by approximately 42 percent versus planar-type SiC MOSFETs.



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