News Article
EPC adds Relaxed Pitch GaN FETs
1mm pitch allows additional and larger vias for higher current capability
EPC has introduced three eGaN FETs designed with a wider pitch connection layout. These products expand EPC's family of 'Relaxed Pitch' devices featuring a 1mm ball pitch.
EPC says that the wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the small 2.6mm x 4.6 mm footprint.
Compared to a state-of-the-art silicon power MOSFETs with similar on-resistance, these products are much smaller and have far better switching performance, according to the company.
They are suitable for applications such as high frequency DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, and class-D audio.
