MACOM Expands GaN Portfolio with Wideband Power Amplifier
MACOM has announced the NPA1006, a GaN-on-silicon wideband power amplifier designed for 20 to 1000MHz operation. The HEMT D-Mode amplifier is suited for narrowband to broadband applications spanning test and measurement, defence communications, land mobile radio and wireless infrastructure.
The NPA1006 is designed for saturated and linear operation, featuring output levels up to 12.5W (41 dBm). It has 50Ω input matched and output unmatched, 28V operation and 14dB gain. The device provides 65 percent drain efficiency at 900MHz.
"The NPA1006 is a great addition to MACOM's expanding GaN portfolio," said Gary Lopes, senior product director, MACOM. "With our Gen 1 and Gen 2 products fully qualified and millions of units in the field, we are excited to continue leveraging our global design resources and deep GaN application experience to offer the industry the best performance, gain, efficiency and low cost products with our new Gen 4 technology."
