Toshiba Expands Ultra-High-Efficiency MOSFET Family
Toshiba Electronics Europe (TEE) has expanded its family of ultra-high-efficiency, low-voltage MOSFETs by adding new 30V and 60V devices to the company's existing 40V offering. All of the devices will be available in ultra-compact, thermally efficient DSOP Advance package options that significantly improve heat dissipation through dual-sided cooling.
Comprising one 30V device and one 60V device, the new N-channel MOSFETs are based on Toshiba's next-generation U-MOS IX-H trench semiconductor process. This process has been designed to deliver "˜best-in-class' efficiency across a wide range of load conditions by driving down on resistance (RDS(ON)) and improving switching efficiency by reducing output charge (QOSS).
The MOSFETs will help designers to reduce losses and board space in a variety of power management circuits including high-side and low-side switching in DC-DC conversion and secondary side synchronous rectification in AC-DC designs. The technologies are also ideal for motor control and for protection circuit modules in electronic equipment based on Lithium ion (Li-ion) batteries.
