SiC Junction Transistors Diodes Offered In Mini-module
GeneSiC Semiconductor, a US developer of SiC power semiconductors, has announced the availability of 20mÎ©-1200V SiC junction transistor-diodes in an isolated, 4-Leaded mini-module packaging.
"GeneSiC's SiC transistor and rectifier products are designed and manufactured to realize low on-state and switching losses. A combination of these technologies in an innovative package promises exemplar performance in power circuits demanding wide bandgap based devices. The mini-module packaging offers great design flexibility for use in a variety of power circuits like H-Bridge, Flyback and multi-level inverters" said Ranbir Singh, President of GeneSiC Semiconductor.
The diodes enable low turn-on energies losses while offering flexible, modular designs in high frequency power converters, according to the company.
Co-packaged SiC junction transistors (SJT)-SiC Rectifiers offered by GeneSiC are applicable to switching applications such as induction heaters, plasma generators, fast chargers, DC-DC converters, and switched mode power supplies. According to the company, SJTs are the only widebandgap switch to offer >10 Âµsec repetitive short circuit capability, even at 80 percent of the rated voltages (e.g. 960V for a 1200V device).
In addition to the sub-10ns rise/falls times and a square reverse biased safe operation area (RBSOA), the Gate Return terminal in the new configuration significantly improves the ability to reduce the switching energies. These new class of products offers transient energy losses and switching times that are independent of junction temperature.
SiC junction transistors from GeneSiC are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven at low gate voltages, unlike other SiC switches.
SiC Schottky rectifiers used in these mini-modules show low on-state voltage drops, good surge current ratings and industry's lowest leakage currents at elevated temperatures. With temperature independent, near-zero reverse recovery switching characteristics, SiC Schottky rectifiers are ideal candidates for use in high efficiency circuits.