Cree announces Industry's First 900V SiC MOSFET
New device performance 'eclipses' incumbent silicon solutions
Cree has introduced what it believes is the industry's first 900V SiC MOSFET range. Designed for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the 900V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.
"As a technology leader in SiC power, we're committed to breaking the performance barriers that really matter to the power conversion design community," said Cengiz Balkas, vice president and general manager, Cree Power and RF.
He added: "When compared to equivalent silicon MOSFETs, this breakthrough 900V platform enables a new market for our products by broadening the power range we can address in end systems. Following our 1200V MOSFETs, which exhibit superior performance to high voltage IGBTs, we are now able to outperform lower voltage superjunction silicon MOSFET technology at 900V."
Built on Cree's SiC planar technology, the new 900V MOSFET platform expands the product portfolio to address design challenges common to new and evolving application segments in which a higher DC link voltage is desirable.
According to Cree, existing 900V silicon MOSFETs have severe limitations for high frequency switching circuits due to switching losses and poor internal body diodes. Further limiting the use of silicon MOSFETs is the Rds(on) that increases 3X over temperature, which causes thermal issues and significant derating. Alternately, Cree's new 900V MOSFET technology delivers low Rds(on) at higher temperatures, enabling a significant size reduction of the thermal management system.
The lead product (C3M0065090J) features a low on-resistance rating of 65mΩ. At higher temperature operation (TJ = 150degC), the RDS(ON) is just 90mΩ.
