EPC Launches MOSFET-priced GaN Power Transistors
EPC has announced 60V and 100V eGaN power transistors designed to compete on price, while outperforming silicon. EPC says that these products demonstrate that GaN can displace silicon semiconductors and drive the industry back onto the Moore's Law growth curve.
EPC says that the power MOSFETs used (above) for comparison to these the 60V EPC2035 and 100V EPC2036 GaN FETs were selected based on having comparable maximum rated on-resistance (RDS(on)) and having the same maximum rated breakdown voltage (VDS(max)).
The capacitances are less for the new EPC2035 and EPC2036 than for their counterpart MOSFETs. Device area is also shown for comparison and it can be seen that the EPC2035 and EPC2036 are one-fortieth the area of their equivalent MOSFET component.
Pricing for the EPC2035 power transistors at 1K units is $0.36 each and $0.38 for the EPC2036. The 10K unit prices are $0.29 and $0.31 respectively.
