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Rohm To Show 3rd Generation SiC MOSFETs At PCIM

New 1200V and 650V devices based on trench gate structure

At PCIM, the trade fair for power electronics, intelligent motion, renewable energies and energy management in Nuremberg from May 19 - 21, 2015, Rohm Semiconductor will present its third generation of SiC MOSFETs.

These include 1200V and 650V SiC MOSFETs based on a Trench Gate structure. The company is also developing SiC MOSFETs with a breakdown voltage of 1700V.

According to Rohm, compared to conventional planar MOSFETs, Trench MOSFETs reach about half of the same on-resistance over the whole temperature range while the stability of the gate oxide film and of the body diode remains as high as with Rohm's second generation SiC MOSFETs.

The reverse recovery behaviour has been greatly reduced. In principle, there is no tail current during switching, resulting in faster operation and reduced switching loss by 30 percent. The result is higher reliability and increased current-carrying capacity at reduced cell density and minimum conductivity while keeping a compact format, according to the company.


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