GeneSiC offers high temperature SiC Transistors and Rectifiers in TO-46
GeneSiC Semiconductor, a SiC power semiconductor specialist, has announced the availability of a line of compact, high temperature SiC junction transistors as well as a line of rectifiers in TO-46 metal can packages.
These discrete components are designed and manufactured to operate under ambient temperatures of greater than 225degC. The use of high temperature, high voltage and low on-resistance capable SiC transistors and rectifiers will reduce the size/weight/volume of electronics applications requiring higher power handling at elevated temperatures, says the company.
The devices are targeted for use in a wide variety of applications including downhole circuits, geothermal instrumentation, solenoid actuation, general purpose amplification, and switched mode power supplies.
The SiC Junction Transistors (SJT) offered by GeneSiC exhibit sub-10nsec rise/falls times enabling >10 MHz switching as well as a square reverse biased safe operation area (RBSOA). The transient energy losses and switching times are independent of junction temperature.
The switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by 0/+5 V TTL gate drivers, unlike other SiC switches. According to the company, advantages of the SJT in contrast to other SiC switches is its higher long term reliability, >10µs short circuit capability, and superior avalanche capability. These devices can be used as efficient amplifiers as they promise a much higher linearity than any other SiC switch.
The SiC Schottky rectifiers being offered by GeneSiC show low on-state voltage drops, and what are claimed to be the industry's lowest leakage currents at elevated temperatures. With temperature independent, near-zero reverse recovery switching characteristics, SiC Schottky rectifiers are suitable for use in high efficiency, high temperature circuits. The TO-46 metal can packages as well as the associated packaging processes used to create these products critically enable long term use where high reliability is critical.
"GeneSiC's Transistor and Rectifier products are designed and manufactured from the ground up to enable high temperature operation. These compact TO-46 packaged SJTs offer high current gains (>110), 0/+5 V TTL control, and robust performance. These devices offer low conduction losses and high linearity. We design our "SHT" line of rectifiers, to offer low leakage currents at high temperatures. These metal can packaged products augment our TO-257 and metal SMD products released last year to offer small form factor, vibration resistant solutions," said Ranbir Singh, president of GeneSiC Semiconductor.
