Cree SiC MOSFET Named In 2014 Hot List
One of Cree's SiC MOSFETs has been named by Electronic Design News (EDN) as one of the 'Hot 100 Products of 2014'. The 2014 EDN Hot 100 highlights the electronics industry's most significant products of the year based on innovation, significance, usefulness, and popularity, chosen by EDN's editors and readers.
Cree's C2M0025120D, introduced in May 2014, is claimed to be the first commercially available 1200V SiC MOSFET with an RDS(ON) of 25mΩ in an industry-standard TO-247-3 package.
Based on Cree's C2M SiC MOSFET technology, the device has a pulsed current rating of 250A (making it suitable for pulsed power applications) and a positive temperature coefficient (allowing it to be paralleled to achieve even higher power levels).
The higher switching frequency can help design engineers to reduce the size, weight, cost and complexity of power systems in applications including: PV inverters, high-voltage DC/DC converters, induction heating systems, electric vehicle (EV) charging systems, and medical computer tomography applications.
