Mitsubishi to Launch Large Hybrid SiC module
More efficient power modules for PV power conditioner applications
Mitsubishi Electric has launched a hybrid SiC transfer-mould dual in-line package intelligent power module (DIPIPM). It incorporates a SiC Schottky barrier diode and seventh-generation IGBT chips featuring the carrier-stored trench-gate bipolar transistor structure.
The new module is designed to reduce the power consumption and size of PV inverter applications. It reduces power loss by about 25 percent compared with Mitsubishi Electric's existing PV product (PS61A99), according to the company.
It helps to downsize PV inverter system thanks to modified short-circuit protection scheme. The IGBT chip has a current-sensing pin that can be used for external short-circuit protection function. It also eliminates the need for a large external shunt resistor.
