EPC adds 60V monolithic GaN Half Bridge
Efficient Power Conversion (EPC) has introduced the EPC2101 60V enhancement-mode monolithic GaN power monolithic half bridge.
By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50 percent reduction in board area occupied by the transistors.
This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user's power conversion system. The EPC2101 is ideal for high frequency DC-DC conversion.
For a complete buck converter, system efficiency approaches 87 percent at 14A, and over 82 percent at 30A when switching at 500kHz and converting from 28V to 1V while reducing the board area occupied by transistors by 50 percent when compared to a discrete solution.
Each device within the EPC2101 half-bridge component has a voltage rating of 60V. The upper FET has a typical RDS(on) of 8.4mΩ, and the lower FET has a typical RDS(on) of 2mΩ. The high-side FET is approximately one-fourth the size of the low-side device to optimise efficient DC-DC conversion in buck converters with a high VIN/VOUT ratio.
The EPC2101 comes in a chip-scale package for improved switching speed and thermal performance, and is only 6.05 mm x 2.3 mm for increased power density.
