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News Article

EPC introduces 80V monolithic GaN Half Bridge

Efficiency approaching 98 percent for power system designers

Efficient Power Conversion (EPC) has announced the EPC2105, 80V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, claims the company. 

This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user's power conversion system. The EPC2105 is ideal for high frequency DC-DC conversion and enables efficient single stage conversion from 48 V directly to 1V system loads.

The device offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 98 percent at 10A when switching at 300kHz and converting from 48V to 12V, and 84 percent at 14A when switching at 300 kHz and converting from 48 V to 1.0 V.

Each device within the EPC2105 half-bridge component has a voltage rating of 80V.  The upper FET has a typical RDS(on) of 10mΩ, and the lower FET has a typical RDS(on) of 2.3 mΩ. The high-side FET is approximately one-fourth the size of the low-side device to optimize efficient DC-DC conversion in buck converters with a high VIN/VOUT ratio. The EPC2105 comes in a chip-scale package for improved switching speed and thermal performance, and is only 6.05 mm x 2.3 mm for increased power density.

The 2in x 1.5in  EPC9041 development board is also available, containing one EPC2105 integrated half-bridge component using the Texas Instruments LM5113 gate driver, supply and bypass capacitors.  The board has been laid out for optimal switching performance and there are various probe points to facilitate simple waveform measurement and efficiency calculation. 


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