GeneSiC releases 1700V and 1200V SiC junction transistors
SiC switches offer low conduction losses and superior short circuit capability
GeneSiC Semiconductor, a US maker of SiC power semiconductors, has announced its second generation of SiC junction transistors, a family of low on-resistance 1700V and 1200V SiC junction transistors in TO-247 packages. It describes them as the highest power single-chip transistors on the market.
According to the company, these high voltage, high frequency, high temperature and low on-resistance capable SiC junction transistors will increase conversion efficiency and reduce the size/weight/volume of power electronics applications requiring higher bus voltages. Applications include DC microgrids, Vehicle Fast chargers, server, telecom and networking power supplies, uninterruptable power supplies, solar inverters, wind power systems, and industrial motor control systems.
GeneSiC's SiC junction transistors exhibit ultra-fast switching capability (similar to that of SiC MOSFETs), a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by commercially gate drivers, unlike other SiC switches. In contrast to other SiC switches, SiC junction transistors are said to offer higher long term reliability, greater than 10µsec short circuit capability, and superior avalanche capability
"These improved SJTs offer much higher current gains (>100), highly stable and robust performance as compared to other SiC switches. GeneSiC's SJTs offer extremely low conduction losses at rated currents as superior turn-off losses in power circuits. Utilising the unique device and fabrication innovations, GeneSiC's transistor products help designers achieve a more robust solution," said Ranbir Singh, president of GeneSiC Semiconductor.