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GaN Systems to show new GaN transistors at ECCE in Pittsburgh

Devices feature intrinsic fast switching and dense current carrying capability

GaN Systems, a developer of GaN power switching semiconductors, is exhibiting its latest products at ECCE, the IEEE Energy Conversion Congress & Expo  2014 being held in Pittsburgh, USA from September 14th to 18th.  

The event is the world's leading technical conference and exhibition focussing on next generation green and sustainable energy technologies and attracts an international audience interested in the latest innovations from industry and research from academic experts in the field.  

GaN Systems is showing its range of GaN power transistors based on its proprietary Island Technology, which produces highly efficient, smaller transistors at lower cost than traditional silicon MOSFETs and IGBTs.

GaN Systems' devices feature intrinsic fast switching and dense current carrying capability, further enhanced by the company's GaNPX packaging, which has no wire bonds, minimising inductance and thermal resistance and increasing reliability. 

These new devices from GaN Systems bring smaller, lighter and more efficient power electronics to numerous applications including consumer appliances, data centre server racks, heavy-duty battery-operated power tools, notebook travel adaptors and many others. They have current ratings from 8A to 200A.

 GaN Systems is the first company to offer a comprehensive product range of GaN devices to the global market through an exclusive worldwide distribution agreement with Mouser Electronics. 


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