MACOM adds 15W GaN on SiC Pulsed Power Transistor
HEMT delivers 63 percent drain efficiency with 50V operation over DC to 3.5GHz
MACOM, the supplier of RF, microwave, and millimeter wave products, has announced new GaN on SiC HEMT pulsed power transistors.
Suitable for both civilian and military radar pulsed applications, the MAGX-000035-015000 and MAGX-000035-01500S are gold-metalised unmatched RF power transistors that provide a typical 17W of peak output power with 15.5dB of power gain and 63 percent efficiency.
The company says that they provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths.
"The new 15 W peak GaN power transistor offers a versatile and high performance solution for pulsed driver and power applications over a broad frequency range," said Paul Beasly, product manager. "The device is an ideal driver stage for MACOM's higher power GaN transistors for L-Band and S-Band pulsed radar applications."
Operating between the DC and 3.5GHz, the devices have a mean time to failure (MTTF) of 600 years. The product is offered in both an enhanced flanged (Cu/W) and flangeless (Cu) ceramic package which provide excellent thermal performance.
