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Nexperia expands ideal diode range

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Low-voltage diodes reduce power losses by up to an order of magnitude

Nexperia has announced the addition of two new ideal diode ICs to its portfolio of power devices. The NID5100 is suitable for standard industrial and consumer applications while the NID5100-Q100 has been qualified for use in automotive applications.

Ideal diodes are MOSFET based devices that offer much lower forward voltage drop than traditional diodes and are a suitable replacement for standard diodes in systems where power efficiency is paramount.

The NID5100 and NID5100-Q100 are available in TSSP6/SOT363-2 leaded plastic packages measuring 2.1 mm x 1.25 mm x 0.95 mm. Applications that can benefit include smart meters, fire/security sensors, battery powered wearables, and automotive telematics units.

The NID5100 is a PMOS based device, on which the gate voltage of an internal MOSFET regulates the ‘anode’ to ‘cathode’ voltage to be eight to ten times lower than the forward voltage drop of similarly rated Schottky diodes. Besides the low forward drop, the MOSFET based ideal diode also helps to reduce reverse DC leakage current by up to 100 times compared to a typical Schottky diode, according to Nexperia.

The NID5100 supports 'OR-ing' multiple power supplies while retaining reverse polarity protection and provides ultra-fast response time for smooth power transfer. Other advantages include a forward regulation voltage of 31 mV (typ), the ability to handle forward current up to 1.5 A, and an automatic transition between OR-ed supplies.

It operates within a voltage range of 1.2 V to 5.5 V and has a low current consumption, with a 3.3 V VIN shutdown current of 170 nA and a quiescent current of 240 nA. The diode further includes reverse voltage protection with an absolute maximum rating of -6 V and an output status indication (ST), making it suitable for power management applications.


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