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Magnachip unveils 8th gen MXT LV MOSFET

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Super-Short Channel FET II technology decreases power loss and shortens charging times in smartphones

Magnachip has announced the release of its 8th-generation MXT LV MOSFET for smartphone battery protection circuits, based on the company's new Super-Short Channel FET II (SSCFET II) technology.

The first device is a 12V dual N-channel MOSFET (MDWC12D024PERH), which Magnachip says has a 22 percent lower RSS(on) compared to the previous generation product. As a result, the chip decreases power loss, shortens smartphone charging times, and lowers the internal temperature of smartphones by about 12 percent in fast charging mode.

"Following the development of Super-Short Channel FET I technology and the successful product rollout early last year, Magnachip has now introduced an upgraded Super-Short Channel FET II technology,” said YJ Kim, CEO of Magnachip.

“We plan to continue developing innovative high-density cell trench technology and launch advanced power solutions targeting smartphones, smartwatches and earphones throughout the second half of this year."


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