Samsung backs next gen GaNFast
Navitas GaN power ICs now fast-charge Samsung’s Galaxy Series-A, Galaxy Z Fold6 and Galaxy Z Flip6 phones
Navitas Semiconductor has announced that Samsung had expanded adoption of Navitas’ GaNFast ICs from the original Galaxy S22, S23 and S24 to the mainstream Galaxy A, and also the new Galaxy Z Fold6 and Galaxy Z Flip6 smartphones with Galaxy AI features.
GaN runs up to 20x faster than legacy silicon and enables chargers up to 3x more power and 3x faster charging in half size and weight.
Navitas says that its GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving up to a 50 percent shrink vs. prior designs.
The new 25W charger (EP-T2510) features new energy-saving technology to reduce standby losses by 75 percent to only 5 mW, which aligns with Navitas’ environmental advances, where every GaNFast IC saves 4 kg of CO2 vs. legacy silicon chips.
“Since enabling the world’s first production GaN charger in 2018, Navitas has pioneered and leads the adoption of GaN to replace legacy silicon chips,” noted David Carroll, SVP Worldwide Sales for Navitas. “Our production partnership with Samsung dates back to the Galaxy S22 Ultra, and today’s announcement reflects the dramatic expansion of GaN from niche, flagship designs to adoption in high-volume, mainstream phones.”
