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Navitas To Demo Latest GaN Technology In China

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Company to participate in multi-city 'Power 2017' conference

Navitas Semiconductor has announced its participation in China’s annual multi-city power conference 'Power 2017', where new GaN Power IC applications for advanced mobile, industrial and consumer markets will be unveiled.

“Power 2017 is a great opportunity for us to demonstrate the benefits of Navitas GaN technology and enable our Chinese customers to achieve market-leading converter performance", said Stephen Oliver, the company’s vice president of sales & marketing. “Our high-performance, easy-to-use GaN Power ICs help Chinese designers to deliver next-generation power solutions on schedule and at the right price."

In February, Navitas announced a major technology breakthrough with the introduction of the industry’s first integrated half-bridge GaN power IC, enabling up to a 100x increase in switching speeds while increasing energy savings by 40 percent or more. Four months later, the company announced its breakthrough 150W AC-DC demo board at over 21 W/in3 and over 95 percent efficiency, making it 2x smaller than typical commercial designs.

“We are excited to showcase Navitas GaN Power IC technology at Power 2017" said Daphne Liu, General Manager of 21IC “Chinese designers are hungry for new, proven solutions that can be used for best-in-class power converters for smartphone, laptop and TV / monitor applications. On-site attendees in Shenzhen, Shanghai and Beijing, plus those following the live webcasts, have an excellent opportunity to take advantage of Navitas’ enabling technology".

The three Power 2017 conference venues are: Venetian Hotel, Shenzhen – Sept. 2; Zhongyou Sunshine Hotel Shanghai – Sept. 7; and Guobin Hotel, Beijing – Sept. 15.


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