News Article

Ixys Announces Ultra Fast 1200V SiC Schottky Diodes

Dual diodes in MiniBLOC package enable higher power applications

Ixys has announced two new ultra fast dual 1200V SiC Schottky Diodes. The fully isolated DCG45X1200NA and the DCG130X1200NA both offer two SiC Schottky diodes with an average forward current of 2 x 22A and 2 x 65A, respectively at 80degC case temperature and essentially zero forward and reverse recovery.

"With these new products we are expanding our fast diode portfolio and enable applications with higher power in switching and control for inverters, UPSs and rapid charger solutions," states Elmar Wisotzki, director of technology for Ixys Germany. "Our SiC schottky portfolios give our customers more flexibility in choosing the right product for their application to improve efficiency at best performance-over-cost ratio. The SOT-227 package is a good match with our standard Power MOSFETs and IGBTs, enabling a low profile and high power density design."

According to Ixys, the positive temperature coefficient of the forward voltage drop makes it easy to parallel devices for higher output power. The MiniBLOC package of the new products uses an advanced isolation structure with an optimised low thermal resistance. Lower dynamic losses and reduced thermal impedance allow for reduction of system size because of higher power density and switching frequency. Added benefits are an increase in reliability because of a lower die temperature swing in cycling power demand.

The diodes inside the package are electrically isolated from each other, allowing the designer to connect them either in parallel and build common cathode or phase leg configurations.

Typical applications are high efficient DC-DC converters, power inverters, uninterruptible power supply (UPS) systems, high performance power supplies, welding equipment and rapid-charger solutions.

Siemens Supports Sustainable Urban Transport With EBus Charging Infrastructure In Nuremberg
Toshiba Releases Industry’s First High-Speed Communications Photocouplers That Can Operate From A 2.2V Supply
Microchip Delivers The Smallest Automotive MaXTouch Controllers For Smart Surfaces And Multi-function Displays
Heraeus Launches New Bonding Ribbon For SiC Modules
Rohm And Leadrive Establish Joint Lab For SiC Automotive Modules
Tektronix And A2LA Partner On Ventilator Production By Reconfiguring And Accrediting Torque Tools
APEC 2021: Recruiting Qualified Tech Paper Reviewers
EPC To Present On GaN At Virtual PCIM
British Gas Makes Largest UK Commercial EV Order With Vauxhall
Allegro Releases World’s Most Accurate 400 KHz Current Sensor IC With 5 KV Isolation Rating
GaN And SiC Power Semi Markets To Pass $1B In 2021
SAIC-GM-Wuling Builds Energy Storage Power Station From Retired EV Batteries
New Silicon Carbide Power Module For Electric Vehicles
Communication Without Mask
Toshiba Expands Super Junction N-Channel MOSFET Series With Addition Of New 650V Devices
Yole Releases SiC And GaN Update
Mitsubishi Announces 1200V SiC-MOSFET
CoolSiC For Ultra-fast Pit Stops ...
Mercedes-Benz Announces Strategic Partnership And Equity Stake In Battery Cell Manufacturer Farasis
New Rohm SiC MOSFETs Featuring The Industry’s Lowest ON Resistance
CoolSiC Module Opens Up New Applications For SiC
Cambridge GaN Devices Leads €10.3M European Project
Deltaray Enables Zero-defect Product Manufacturing For Medical Devices, Pharmaceutical And Automotive Industries
II-VI Licenses SiC Technology From GE

Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: