StratEdge Packages to Include High-Power GaN Transistors and MMICs
The packages can now accommodate large MMICs, with die attach areas as high as 5.92 x 12.14mm. They operate at frequencies from DC to as high as 63GHz for applications in communications, radar, automotive, aerospace, defense, and those requiring high power millimeter-wave signals.
In addition to the packages, which are manufactured in StratEdge's San Diego, California facility, StratEdge offers complete automated assembly and test services for these packages, including gold-tin solder die attach.
These assembly processes are said to routinely generate >96 percent void-free attachment with bond line thicknesses of <6 microns when used with the new LL series of packages. This is particularly important for GaN power amplifiers where efficient thermal transfer is critical for improved operation and reliability of the device.
The LL family of CMC-base packages dissipate heat from high-power compound semiconductor devices, such as GaN, GaAs, and SiC. These laminate power packages are built with a base material ratio of 1:3:1 CMC, which provides a good thermal match for alumina-based materials and a GaN chip.
"StratEdge was one of the first to market with laminate power packages for GaN devices," said Tim Going, StratEdge president. "StratEdge has continued to develop packages to handle the requirements of new materials and devices. Our LL family additions can handle frequencies up to 63 GHz and large MMIC devices, and our precision automated assembly and test services enable the chips to operate with the efficiency and electrical integrity they were designed to achieve."
StratEdge will be exhibiting at the 2017 International Microwave Symposium (IMS2017), to be held 6-8 June 2017, at the Hawaii Convention Centre in Honolulu, Hawaii.
