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Toshiba Launches Second Generation SiC Diodes

650V Schottky barrier diodes have 70 percent better surge forward current

Toshiba has launched a second generation of 650V SiC schottky barrier diodes (SBDs).

Fabricated with the company's second-generation SiC process, they deliver approximately 70 percent better surge forward current than first generation products. At the same time, they reduce the switching loss index of RdsON Qc by around 30 percent, making them suitable for use in efficient power factor correction (PFC) schemes.



The new products are available in four current ratings of 4A, 6A, 8A, and 10A, either in a non-isolated TO-220-2L package or an isolated TO-220F-2L package. These products can contribute to improving the efficiency of power supplies in devices including 4K large screen LCD TVs, projectors and multifunction copiers, and in industrial devices such as telecommunication base stations and PC servers, according to Toshiba.


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