News Article

Transphorm Announces New TO-220 650V GaN FET

Lower on-resistance devices enables bridge-less totem-pole PCF  designs

GaN semiconductor company Transphorm has announced a new addition to its range of FETs for high voltage power conversion applications. 

Available in a TO-220 package, the 650V TPH3212PS has an on-resistance of 72mΩ and targets AC to DC and DC to AC power supplies. When used inside the former, the TPH3212PS-along with its family members-makes implementing bridge-less totem-pole power factor correction (PFC) designs possible.

To date, Transphorm's product portfolio consists of 600V and 650V discrete FETs spanning TO-220, TO-247, and PQFN88 packages for power levels up to 4.5 kilowatts. The TPH3212PS fills a power level gap in the company's second generation product line, specifically between the 52mΩ and 110mΩ FETs.

 As a result, battery charger, PV inverter, server and servo motor manufacturers gain more design flexibility with Transphorm's newest high-quality, high-reliability discrete device, according to the company.

Release of the TPH3212PS remains in step with Transphorm's mission to enable design engineers to effectively implement GaN technology into designs. The company develops its GaN in TO-XXX and PQFN88 packages. Further, Transphorm uses the high-reliability cascode configuration, which eliminates the need for custom drivers and-most importantly-considerably increases the GaN FET's gate safety margin.

"Transphorm aims to enable the market by delivering GaN in the highest quality, highest reliability format as possible," said Umesh Mishra, CTO, Transphorm. "We recognise GaN is not just a drop-in replacement for silicon MOSFETs used today. Board redesign and system modifications are required to capitalise on GaN's complete set of benefits from performance through to system cost. If we can minimise that learning curve by working with well-known packages and a configuration that behaves similarly to a MOSFET - we believe the industry will move further faster."

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