News Article

Panasonic Starts Production Of Gate Drivers For X-GaN Range

High speed gate drivers to contribute to space and energy savings of power conversion units

Panasonic has announced it will start mass production of a high-speed gate driver (AN34092B) optimised for its GaN power transistor X-GaN. The company says it will also start mass production of two types of X-GaN "“ the 70mΩ PGA26E07BA and the 190 mΩ PGA26E19BA  - and provide solutions in combination with high-speed gate drivers.

General gate drivers for conventional silicon transistors cannot exploit the potential of GaN transistors since the gate structure of GaN transistors is different from that of Si transistors. The new high-speed gate driver (AN34092B) can drive transistors at high frequencies of up to 4MHz and integrates the active miller clamp function that prevents malfunction during high-speed switching.

X-GaN achieves a 600V breakdown enhancement mode and features high-speed switching and low on-resistance. 

According to Panasonic, the combination of X-GaN and dedicated high-speed gate drivers will contribute to significant space and energy savings of various power conversion units for industrial and consumer use.

X-GaN and dedicated high-speed gate drivers are suitable for 100W to 5kW power supply units, inverters, datacentres, mobile base stations, consumer electronics, audio-visual equipment, industrial and medical devices.

X-GaN and the dedicated high-speed gate driver will be exhibited at electronica 2016 in Munich, Germany from November 8th to 11th.

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