News Article

GaN Systems On Display At Electronica 2016

Customer power systems and new evaluation kit showcase performance of GaN E-HEMT devices

At electronica 2016 in Munich, from November 8-11, GaN Systems will be showing a range of customer systems that incorporate its GaN Enhancement-mode HEMT (E-HEMT) devices. 

It will also be displaying a new evaluation kit for these devices.

Customer's products include: an ultra-small, 10 kW, 3-phase PV inverter with a power density over 14 kW/L; a 12 kW, 48 V stop/start generator five times smaller and three times lighter than its silicon-based predecessor; an integrated motor controller and 1.5 kW DC motor; a record setting, high power 250W wireless charger; a compact 1.2 kW battery charger; a 50 kW commercial energy storage system five times smaller than its silicon version; and  2.6 kW/L ultra-compact electric vehicle battery charger.

The new daughterboard-style evaluation kit is designed to help power engineers easily evaluate GaN transistor performance in any half bridge-based topology, along with a universal motherboard (GS665MB-EVB). 

The family of daughter cards ranges from 750 W to 2.5 kW, and consists of two GaN Systems 650 V GaN E-HEMTs and the necessary circuits, including half-bridge gate drivers, isolated power supplies and an optional heatsink to form a functional half bridge power stage.

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