IXYS Announces 850V Ultra-Junction X-Class Power MOSFETs
IXYS, a global manufacturer of power semiconductors and integrated circuits (ICs) for energy efficiency, power management, transportation, medical, and motor control applications, has introduced a new power semiconductor product line, the 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes. With current ratings up to 110A, these rugged devices enable a very high power density in high voltage power conversion applications.
These new 850V devices exhibit the lowest on-state resistances in the industry (33 milliohms in the SOT-227 package and 41 milliohms in the PLUS264, for instance), along with low gate charges and superior dv/dt performance. Their avalanche capability enhances their ruggedness, preventing device failure induced by voltage transients and accidental turn-on of parasitic bipolar transistors. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI).
Well suited applications include such high efficiency, high power density applications as switched mode and resonant mode power supplies, AC and DC motor drives, DC-DC converters, robotic and servo control, electric vehicle battery chargers, renewable energy inverters, and Power Factor Correction (PFC) circuits.
The new 850V X-Class Power MOSFETs with HiPerFET body diodes are available in the following international standard size packages: TO-220, TO-263HV, SOT-227, TO-247, TO-264, PLUS264 and TO-268HV. Some example part numbers include IXFH20N85X, IXFK50N85X, IXFB90N85X and IXFN110N85X, with current ratings of 20A, 50A, 90A, and 110A, respectively.
