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Thursday 12th October 2017
High quality EpiEra wafer attains more than 99 percent defect free area
Tuesday 10th October 2017
500W GaN-on-Si power transistor for L-Band Airport Surveillance Radar (ASR) applications delivers more than 70 percent efficiency
Friday 6th October 2017
Crystal growth furnace manufacturer, GTAT, has a solution that could see the price of SiC substrates plummet, reports Rebecca Pool.
Thursday 5th October 2017
Repeat order for AIX G5+ C system targets GaN epitaxial wafers and devices for power electronics applications
Info
Wednesday 4th October 2017
RF foundry and components business continues to innovate to meet demands of upcoming 5G systems
Tuesday 26th September 2017
CoolSiC family has a new layout, new cell structure, and a new proprietary Schottky metal system
Tuesday 26th September 2017
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Tuesday 26th September 2017
Monday 25th September 2017
Professor emeritus of Kyoto University recognised for contributions to pioneering research on SiC power devices and their practical applications
Friday 22nd September 2017
On-resistance is reduced by 40 percent and power loss by more than 20 percent compared to conventional SiC-MOSFETs
Thursday 21st September 2017
Yaskawa’s Σ-7 F uses Transphorm's high-voltage GaN FETs to deliver better performance in a smaller form factor
Wednesday 20th September 2017
USB-PD adapter reference design delivers 65W in 51 x 43 x 20.5 mm
Info
Friday 15th September 2017
Battery sizing: oversize, augment, reduce or repower? How big is too big? Fliss Jones and the Everoze storage team want to settle the matter, once and for all.
Thursday 14th September 2017
Company reports a threading screw dislocation density below 500 cm-2
Thursday 14th September 2017
PRESiCE process should lower barrier of entry to SIC market and increase innovation, says NC State team
Thursday 14th September 2017
Company to expand wafer capacity from 3,000 to 5,000 wafers per month next year

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