Toshiba completes 300 mm fab for power semis
Company aims to start mass production in the second half of fiscal year 2024
Toshiba Electronic Devices & Storage has completed a new 300 mm wafer fabrication facility for power semiconductors at Kaga Toshiba in Ishikawa Prefecture, Japan.
The completion of construction is a milestone for Phase 1 of Toshiba’s multi-year investment program. Toshiba is now going ahead with with equipment installation, toward starting mass production in the second half of fiscal year 2024.
Once Phase 1 reaches full-scale operation, Toshiba says its production capacity for power semiconductors, mainly MOSFETs and IGBTs will be 2.5 times that of fiscal 2021, when the investment plan was made. Decisions on the construction and start of operation of Phase 2 will reflect market trends.
The new manufacturing building has a seismic isolation structure that absorbs earthquake shock and redundant power sources. Energy from renewable source and solar panels on the roof of the building (onsite PPA model) will allow the facility to meet 100 percent of its power requirement with renewable energy.
Product quality and production efficiency will be boosted by the use of artificial intelligence (AI), according to Toshiba which expects to receive a grant from the Ministry of Economy, Trade and Industry of Japan to subsidise its investment in part of the manufacturing equipment.
