Littelfuse gate driver suits SiC MOSFETs and IGBTs
New driver offers tailored turn-on and turn-off timing
Littelfuse has launched a low-side SiC MOSFET and IGBT gate driver with separate 9 A source and sink outputs for tailored turn-on and turn-off timing while minimising switching losses.
In addition, the new chip, IX4352NE, has an internal negative charge regulator to provide a user-selectable negative gate drive bias for improved dV/dt immunity and faster turn-off. The chip has an operating voltage range (VDD - VSS) of up to 35 V.
Other features include an internal negative charge pump regulator, which eliminates the need for an external auxiliary power supply or DC/DC converter. This feature is particularly valuable for turning off SiC MOSFETs, saving valuable space typically required for external logic level translator circuitry. The logic input is compatible with standard TTL or CMOS logic levels.
The IX4352NE is suitable for driving SiC MOSFETs in industrial applications such as on-board and off-board chargers, Power Factor Correction (PFC), DC/DC converters, motor controllers, and industrial power inverters.
Built-in protection features include desaturation detection (DESAT) with soft shutdown sink driver, Under Voltage Lockout (UVLO), and thermal shutdown (TSD). The integrated open-drain FAULT output signals a fault condition to the microcontroller, enhancing safety and reliability.
The IX4352NE is available in tube format in 50 per tube or tape and reel format in quantities of 2,000.
