Loading...
News Article

Infineon and Stellantis partner on power architectures

News
Companies to work together on power conversion and distribution for next generation vehicle architectures

Stellantis N.V. and Infineon Technologies will work jointly on the power architecture for Stellantis’ electric vehicles to support Stellantis’ ambition of offering clean, safe and affordable mobility to all.

To support this, the companies have signed major supply and capacity agreements that will serve as the foundation for the planned collaboration to develop the next generation of power architecture.

These will include Infineon’s PROFET smart power switches, which will replace traditional fuses, reduce wiring and enable Stellantis to become one of the first automakers to implement intelligent power network management. SiC semiconductors, which will support Stellantis in its efforts to standardise its power modules, improve the performance and efficiency of EVs while also reducing costs, will also be part of the deal.

To support this effort, Stellantis and Infineon are in the process of extending their cooperation with the implementation of a Joint Power Lab to define the next-generation scalable and intelligent power architecture enabling Stellantis’ software-defined vehicle.

“As outlined in our strategic plan, Dare Forward 2030, we are securing the supply of crucial semiconductor solutions required to continue our transition to an electrified future leveraging innovative E/E architectures for our next-generation platforms,” said Maxime Picat, Stellantis chief purchasing and supplier quality officer.

“Infineon is now entering a collaboration and innovation partnership with Stellantis,” said Peter Schiefer, president of Infineon’s Automotive Division. “As the world’s leading automotive semiconductor vendor, we bring our product-to-system expertise and dependable electronics to the table."

ST announces family of gate drivers
Infineon and Stellantis partner on power architectures
Power grids supplied by renewables have lower intensity blackouts
Empower brings vertical power product to electronica
Vishay releases new automotive rectifiers
Cambridge GaN Devices to exhibit at Electronica
GaN and SiC 'first' for data centre PSU
Toshiba to exhibit power portfolio at electronica
Nexperia to partner with KOSTAL on automotive WBG devices
Navitas announces Q3 2024 results
Allegro to show new power products at electronica
Power Integrations adds 1700V GaN switcher chip
Infineon launches new generation of GaN discretes
Sanan expands high-voltage SiC portfolio
Infineon adds ASIL-D-compliant 3-phase gate driver
US lab wins $1M grant to boost SiC module voltages
Innoscience expands 100V automotive-grade portfolio
Toshiba and MIKROE introduce motor driving board
Magnachip expands MOSFET production
Infineon unveils world’s thinnest silicon power wafer
'All-GO-HEMT' to develop β-gallium oxide heterostructures
TI adds GaN manufacturing in Japan
Is ZF shelving Wolfspeed SiC fab chip project?
Vishay adds 'stretched' IGBT and MOSFET drivers
US team develop new thermal interface material
Allegro to show power portfolio at Electronica
Fraunhofer ISE opens battery research centre
2000V CoolSiC Schottky diode simplifies design
Ideal Power begins third party automotive testing
Toshiba launches new eFuse ICs
Nexperia adds AC/DC flyback controllers
AGNIT Semi raises $3.5M in seed round

×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: