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Friday 16th May 2014
All-SiC 300A, 1.2kV half-bridge module doubles power density and increased efficiencies 
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Monday 12th May 2014
Three new tiers of manufacturing quality substrates to optimize next-generation power electronic device designs
Friday 9th May 2014
The aggregate purchase price has been increased to $300 million
Friday 9th May 2014
The film combines high glass transition temperature and stress absorption with thermal performance in die‐attach power dissipation
Thursday 8th May 2014
The gallium nitride devices are designed to support data-hungry small cell networks

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