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Monday 18th August 2014
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Thursday 14th August 2014
Samples include 110V and 650V gallium nitride switching devices 
Tuesday 12th August 2014
Wide bandgap materials key to cutting battery costs
Friday 8th August 2014
First high temperature operation of fully integrated device
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Thursday 7th August 2014
Dielectric film growth technique could improve next generation SiC power devices
Wednesday 6th August 2014
Microwave industry veteran has proven track record to boost growth 
Tuesday 5th August 2014
One of only nine fabs to win DoD accreditation
Tuesday 5th August 2014
50W GaN on SiC transistor targets 1.2 to 1.4 GHz
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Thursday 31st July 2014
Integrated suite of design and simulation tools for microwave and RF design
Thursday 31st July 2014
Design targets junction leakage suppression 

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