Info
Info
News Article

EPC Launches 40V EGaN FET

News

Suitable for high power density solutions for USB-C battery chargers and ultra-thin point-of-load converters

EPC, a maker of enhancement-mode GaN on silicon (eGaN) power FETs and ICs, has introduced the EPC2055 (3 mΩ, 40 V) eGaN FET.

This device is suitable for applications with demanding requirements for performance in space-constrained form factors including USB-C battery chargers and ultra-thin point-of-load (POL) converters. Other low-voltage applications benefiting from the fast-switching speeds and ultra-high efficiency of the EPC2055 include LED lighting, 12 V - 24 V input motor drivers, and lidar systems for robotics, drones, and autonomous cars.

According to Alex Lidow, EPC's co-founder and CEO: “The EPC2055 is a very good example of the rapid evolution of GaN FET technology. This 40 volt device offers both smaller size and reduced parasitics compared with previous-generation 40 V GaN FETs and at lower cost; thus, offering designers both improved performance and cost savings.”

The EPC90132 development board is a 40V maximum device voltage, 25 A maximum output current, half bridge with onboard gate drives, featuring the EPC2055 eGaN FETs. This 50.8 mm x 50.8 mm board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2055.


Info
Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info
{taasPodcastNotification} Array