Info
Info
News search:

< Page of 102 >

News


Tuesday 23rd September 2014
Devices support DOCSIS 3.1 networks, including Node+0 architectures
Monday 22nd September 2014
Company also to start shipping a new grade of SiC epitaxial wafers with fewer defects
Thursday 18th September 2014
Research team wins Japan Society of Applied Physics 2014 outstanding paper award
Thursday 18th September 2014
Thursday 18th September 2014
Info
Tuesday 16th September 2014
Companies respond to increased demand for high performance epitaxy
Saturday 13th September 2014
100 watt GaN BUC is nearly twice as power efficient as its GaAs counterparts 
Info
Friday 12th September 2014
Devices feature intrinsic fast switching and dense current carrying capability
Thursday 11th September 2014
Info
Thursday 11th September 2014
Forecasts from Lux Research predict SiC will displace silicon in electric vehicles by 2020. Have GaN-on-silicon alternatives stalled?
Wednesday 10th September 2014
Advanced deposition equipment targets wide band gap semiconductor materials
Tuesday 9th September 2014
Spending rises as new 4 to 18GHzGaN devices become more pervasive
Tuesday 9th September 2014
Device features greater than 20dB of gain across frequency range

×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info